=y fe an amp comdanv rf mosfet power transistor, 4ow, 28v 100 - 500 mhz uf284op features n-channel enhancement mode device dmos structure lower capacitances for broadband operation common source configuration lower noise floor . . absolute maximum ratings at 25c parameter symbol rating units i d i 627 i 6.33 1 247 1 257 1 h ] 1.40 1 165 1 055 1 .d65 j 1 292 i 3.m i 115 i 325 electrical characteristics at 25c input capacitance output capacitance reverse capacitance power gain drain efficiency load mismatch tolerance * per side c iss - ) 45 pf vg28.0 v, f=l .o mhz? c oss 30 pf v,,=28.0 v, f=l .o mhz? c rss a pf v,,=28.0 v, f=l .o mhz? gp 10 - db v,,=28.0 v, 1,,=500.0 ma, p,fi40.0 w. f=500 mhz qd 50 - % v,,=28.0 v, 1,,=500.0 ma, po,,=40.0 w, f=500 mhz vswr-t - 2o:l - v,,=28.0 v, 1,,=500.0 ma, p,,g40.0 w, f=500 mhz specifications subject to change without notice. mia-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344)869 595 fax (800) 618-8883 fax +81 (03)3226-1451 fax +44(1344)300 020
rf mosfet power transistor, 4ow, 28v u f284op v2.00 typical broadband performance curves capacitances vs voltage fz1.0 mhz 40 10 55 c rss 5 10 15 20 25 30 "2, (") gain vs frequency 30 v.,,=28 v i,,=500 ma po,,=40 w c j 100 200 3w 400 500 frequency (mhz) 50 g 4o f l 30 2 5 20 e 10 0 / power output vs voltage p,,=3.0 w i,,=500 ma f=500 mhz 5 10 15 20 25 30 35 v,, (?) 65 - efficiency vs frequency v,,=28 v i,,=500 ma p,,,=40 w 6 c 55. kii 50 . loo 200 3430 400 500 frequency (mhz) power output vs power input 60 vd,=28 v i,,=500 ma 1 j 0.1 0.25 1 2 2.5 power input (w) specifications subject to change without notice. m/a-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 w europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, 4ow, 28v uf284op v2.00 typical device impedance frequency (mhz) 100 300 500 4, (ohms) z load (ohms) 6.0 - j 20.0 25.0 + j 27.0 2.5 - j 5.5 13.0 + j 13.0 4.0 + j 3.0 12.0 + j 5.0 v,,=28 v, i,,=500 ma, p,,,=40.0 watts z,, is the series equivalent input impedance of the device from gate to gate. z lcad is the optimum series equivalent load impedance as measured from drain to drain. ?. t rf test fixture parts l i st c3s c6 : 2 7. 2 12 13 c7, 9, 10 it 14, 1s a9 a6 22 22? lu 14 ll2 13 l7, lo 28? l4 u2 0 wpf ujj pc la pf 470 pf 815 uf 10 uf louf soufsov. loow42sv. 270 tl+f zs v. 2.wlf25onnsmr-rmdco~ 7 tlrds 5 no. e2 avg vire lstum5ra22avgvw x5* ff so m-04 l%nsussion une es?ffsommtr-une ~ff5oputrand(issar(lik 35?~50u+mtrcie(oosswllx .svfsootr-un uf2e4op specifications subject to change without notice. north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 mia-com, inc. n europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
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